Joyce, Hannah JGao, QiangKim, YongJagadish, ChennupatiZhang, XinGuo, YaNanZou, JinFickenscher, M APerera, SHoang, Thang BSmith, Leigh MJackson, Howard EYarrison-Rice, Jan MTan, Hark Hoe2015-12-10August 18-9781424421046http://hdl.handle.net/1885/39192We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable for optoelectronic device applications. Growth temperature and precursor flows have a significant effect on the morphology, crystallographic quality, intrinsic doping and optical properties of the resulting nanowires. Significantly, we find that low growth temperature and high arsine flow rate improve nanowire optical properties, reduce carbon impurity incorporation and drastically reduce planar crystallographic defects. Additionally, cladding the GaAs nanowire cores in an AlGaAs shell enhances emission efficiency. These high quality nanowires should create new opportunities for optoelectronic devices.Keywords: Chemical vapor deposition; Electric wire; Electrooptical devices; Gallium alloys; Growth temperature; Nanostructured materials; Nanostructures; Nanotechnology; Optical materials; Optical properties; Optoelectronic devices; Semiconducting gallium; Semicond GaAs; MOCVD; Nanowire; Photoluminescence200810.1109/NANO.2008.252016-02-24