Simonson, JQadri, S BRao, Mulpuri VFischer, RGrun, JRidgway, Mark C2015-12-130947-8396http://hdl.handle.net/1885/81152High-resolution X-ray diffraction scans and electrical resistivity measurements were performed on Mg-implanted GaAs exposed to laser shock annealing on both the implanted and the unimplanted surfaces of the wafer. Measurements on the sample that was subjected to a laser pulse exposure on the implanted side indicate that annealing had occurred within 3 mm of the center of the laser-exposed spot. X-ray scans and the topographs indicate the propagation of a mechanical wave propagating in the radial direction from the laser-exposed spot. No evidence of annealing, however, was observed at any position on the Mg-implanted GaAs sample that was subjected to a laser pulse exposure on the unimplanted side. The Mg implant did not show any redistribution for the laser-shocked annealing, in contrast to the conventional rapid thermal annealing.Keywords: Electric conductivity; Ion implantation; Laser pulses; Rapid thermal annealing; Scanning electron microscopy; Semiconductor materials; Vaporization; Wave propagation; X ray diffraction analysis; Dopants; Laser-plasma interaction; Laser-shocked annealing;200510.1007/s00339-004-2995-12015-12-11