Paudyal, BijayaMcIntosh, KeithMacDonald, Daniel2015-12-07June 7-129781424429509http://hdl.handle.net/1885/18021Temperature controlled photoconductance is applied to measure the electron and hole capture cross sections of interstitial iron and iron-boron pairs in crystalline silicon. The injection-dependent lifetime was measured before and after light soaking overKeywords: Before and after; Boron defects; Boron-doped silicon; Capture cross sections; Cross-over; Crystalline silicons; Energy level; Hole capture cross sections; Interstitial iron; Light soaking; Photoconductance; Temperature dependence; Temperature dependent; T200910.1109/PVSC.2009.54113802016-02-24