Gai, XinMadden, SteveBulla, DouglasLuther-Davies, BarryChoi, Duk-Yong2016-06-102016-06-101094-4087http://hdl.handle.net/1885/102514We have fabricated 630 × 500nm nanowires from Ge₁₁.₅As₂₄Se₆₄.₅ chalcogenide glass by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching. The loss of the nanowire was measured to be 2.6dB/cm for the fundamental TM mode. The nonlinear coefficient (γ) was determined to be ≈136 ± 7W⁻¹m⁻¹ at 1550nm by both CW four-wave-mixing (FWM) and modeling. Supercontinuum (SC) was produced in an 18mm long nanowire pumped by 1ps pulses with peak power of 25W.The support of the Australian Research Council through its Centres of Excellence program is gratefully acknowledged.© 2010 Optical Society of AmericaDispersion engineered Ge₁₁.₅As₂₄Se₆₄.₅ nanowires with a nonlinear parameter of 136W⁻¹m⁻¹ at 1550nm201010.1364/OE.18.018866