Giniũnas, L.Danielius, R.Jagadish, C.Adomavicius, R.Krotkus, A.Tan, Hark Hoe2015-10-122015-10-120003-6951http://hdl.handle.net/1885/15879The ultrafast dynamics of As-ion-implanted and annealed GaAs is investigated using transmission pump–probe measurements.Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures, the transmitted optical signal is dominated by induced absorption and at higher annealing temperatures this effect is replaced by induced transparency.This work was supported in part by the EC INCOCOPERNICUS project ‘‘DUO—devices for ultrafast optoelectronics’’ and the Lithuanian Science and Study Foundation.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 12/10/15). Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.13567272001-03-1910.1063/1.13567272015-12-10