Chan, KengYe, JiandongParkinson, PatrickMonakhov, E VJohansen, K.M.Vines, LasseSvensson, Bengt GunnarJagadish, ChennupatiWong-Leung, Jennifer2015-12-10December 19781467330459http://hdl.handle.net/1885/59830ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operating in the UV region. However, it is still not possible to achieve p-type ZnO, with hydrogen suggested to be a shallow donor that contributes significantly to the n-type conductivity in as grown ZnO. A better understanding on the role of H in ZnO is needed to realise p-type doping in ZnO. In this research, we utilised multiple structural and optical techniques to study the effects caused by H implantation in ZnO. The H implanted region in single crystal ZnO substrate was characterised by X-Ray diffraction, photoluminescence spectroscopy, secondary ion mass spectroscopy and transmission electron microscopy. XRD results show that H implantation created deformed layers with strain increasing linearly with implantation dose. A blue shift is also observed from the UV photoluminescence emission of the H implanted ZnO.Keywords: Implantation dose; Implanted region; N-type conductivity; Optical technique; Secondary ion mass spectroscopy; Structural and optical properties; UV photoluminescence; Wide-band-gap semiconductor; Microelectronics; Optical properties; Optoelectronic deviceStructural and Optical properties of H implanted ZnO201210.1109/COMMAD.2012.64724392016-02-24