Rao, R.Bradby, J. E.Williams, J. S.2015-12-152015-12-1500036951http://hdl.handle.net/1885/95028An array of features on Si 100 is fabricated by a new maskless pattering process involving a combination of indentation and anisotropic wet chemical etching. Indentation is carried out in order to induce transformation to the high-pressure phases, Si III and Si XII, before etching in a KOH solution. The pressure-induced phases are found to be highly resistant to etching in the KOH solution, with an etch rate more than an order of magnitude slower than that of Si 100. The possibility of exploiting this mechanism for a maskless nanoscale patterning process in Si using indentation is discussed.The authors would like to acknowledge the Australian Research Council and the WRiota Pty Ltd. for funding.http://www.sherpa.ac.uk/romeo/issn/0003-6951© 2007 American Institute of Physics. http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 15/12/2015). This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.Keywords: Indentation; Phase transitions; Wet etching; Nanoscale patterning; Silicon2007-09-2010.1063/1.27791112016-02-24