Cryogenic Steep Slope Field-Effect Transistors (invited talk)

Knoch, J.Richstein, B.Han, Y.Konig, D.Frentzen, M.Hellmich, L.Klos, J.Scholz, S.Zhao, Q. T.2025-06-122025-06-129781665459792ORCID:/0000-0001-5485-9142/work/173452467http://www.scopus.com/inward/record.url?scp=85142819688&partnerID=8YFLogxKhttps://hdl.handle.net/1885/733759680The present paper studies with experiment and simulation a number of measures that improve current cryogenic MOSFETs to enable the device to be operated at very low supply voltages.Financial support of German Research Foundation under ML4Q EXC 2004/1 – 390534769, KN-545/24 and KN-545/29, ZH-639/3 is acknowledged.2enPublisher Copyright: © 2022 IEEE.Cryogenic Steep Slope Field-Effect Transistors (invited talk)202210.1109/SNW56633.2022.995389885142819688