Ernst, MarcoBrendel, Rolf2015-12-072156-3381http://hdl.handle.net/1885/19959Keywords: Aperture area; Inner surfaces; kerf-free; Layer transfer; Macro porous silicon; Monocrystalline; N type silicon; P-n junction; Epitaxial growth; Open circuit voltage; Silicon; Silicon solar cells; Silicon wafers; Thin films; Porous silicon Epitaxy; kerf-free; layer transfer; macroporous silicon; thin filmsMacroporous Silicon Solar Cells With an Epitaxial Emitter201310.1109/JPHOTOV.2013.22470942016-06-14