Black, Lachlan E.Allen, ThomasMcIntosh, Keith R.Cuevas, Andres2015-10-222015-10-220021-8979http://hdl.handle.net/1885/16031We examine the surface passivation properties of Al₂O₃ deposited on boron-doped planar <100> crystalline silicon surfaces as a function of the boron concentration. Both uniformly doped and diffused surfaces are studied, with surface boron concentrations ranging from 9.2 × 10¹⁵ to 5.2 × 10¹⁹ cm⁻³. Atmospheric pressure chemical vapor deposition and thermal atomic layer deposition are used to deposit the Al₂O₃ films. The surface recombination rate of each sample is determined from photoconductance measurements together with the measured dopant profiles via numerical simulation, using the latest physical models. These values are compared with calculations based on the interface properties determined from capacitance–voltage and conductance measurements. It is found that the fundamental surface recombination velocity of electrons, Sn 0 , which describes the chemical passivation of the interface, is independent of the surface boron concentration Ns for Ns  ≤ 3 × 10¹⁹ cm⁻³, and in excellent agreement with values calculated from the interface state density Dit and capture coefficients cn and cp measured on undiffused boron-doped surfaces. We conclude that the physical properties of the Si– Al₂O₃ interface are independent of the boron dopant concentration over this range.9 pageshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 22/10/15). Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.48676432014-03-0710.1063/1.48676432015-12-10