Kim, SPark, C JCho, H YChoi, Suk HoElliman, Robert2015-12-080374-4884http://hdl.handle.net/1885/33043Implantation with 30 keV Si - or Ge - and subsequent annealing at 1100°C create nanocrystalline Si or Ge (nc-Si or nc-Ge) in host materials such as (1̄102) sapphire and fused silica. Photoluminescence (PL) and cathodluminescence (CL) have been used to iKeywords: Cathodoluminescence; Defect; Ge Nanocrystals; Implantation; Photoluminescence; Sapphire; Si Nanocrystals20042015-12-08