Wang, Yan-BoWang, Li-FengJoyce, Hannah JGao, QiangLiao, Xiao-ZhouMai, Yiu-WingZou, JinRinger, Simon PeterGao, Hua-JianJagadish, ChennupatiTan, Hark Hoe2015-12-101022-6680http://hdl.handle.net/1885/68490A significant size effect on the mechanical properties of GaAs nanowires (NWs) is reported. A remarkable elastic strain of ≈11% for NWs with diameters of 50-150 nm and obvious plastic deformation in NWs with diameters ≤25 nm are revealed. The Youngs mKeywords: Deformability; Elastic strain; GaAs; semiconductor nanowires; size effects; Young's Modulus; Deformation; Elastic moduli; Gallium alloys; Gallium arsenide; Nanowires; Semiconducting gallium; Size determination; Transmission electron microscopy; Mechanical mechanical properties; semiconductor nanowires; size effects; transmission electron microscopy201110.1002/adma.2010041222016-02-24