Boudinov, HCoelho, A V PJagadish, ChennupatiTan, Hark Hoe2010-09-222010-12-202010-09-222010-12-20Journal of Applied Physics 93.6 (2003): 3234-80021-89791089-7550http://hdl.handle.net/10440/1108http://digitalcollections.anu.edu.au/handle/10440/1108Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250 °C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ~0.64 eV.5 pageshttp://www.sherpa.ac.uk/romeo/index.php "Author can archive pre-print (ie pre-refereeing) … post-print (ie final draft post-refereeing) … [and] publisher's version/PDF. Link to publisher version … [and] Copyright notice required. Publisher's version/PDF can be used on … employers web site. " - from SHERPA/RoMEO site (as at 25/02/10) © 2003 The American Institute of Physics. "This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics." - from publisher web site (as at 04/05/10)gallium arsenideIII-V semiconductorsdeep levelsdeep level transient spectroscopythermal stabilitydefect statesproton effectsion implantationMOCVD coatingsannealing2003-03-1510.1063/1.15547612015-12-12