Ashrafi, Almamun2015-09-182015-09-180021-8979http://hdl.handle.net/1885/15545Exciton localization in ZnO/MgxZn1−xOquantum wells(QWs) has been investigated systematically with various ZnO well widths for the fixed Mg0.23Zn0.77O barrier height. A strong exciton confinement is observed with an implicit dependence on the built-in electric field which is calculated to be 0.37 MV/cm. The exciton-phonon coupling strength varied significantly depending upon the degrees of exciton localization with the activation energy of 18–29 meV. The relaxation mechanism in ZnO/Mg0.23Zn0.77OQWs starts to dominate when the exciton localization energy is above the thermal energy, kBT. The band characteristics and strong exciton localization in ZnO/Mg0.23Zn0.77OQWs are attributed to the potential fluctuations associated with the inhomogeneous broadening, represented by the schematics.This work is supported by the Australian Research Council.6 pageshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/09/15). Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://dx.doi.org/10.1063/1.3452379Keywords: Band characteristics; Barrier heights; Exciton confinement; Exciton localization; Exciton-phonon couplings; Inhomogeneous broadening; Potential fluctuations; Quantum well; Relaxation mechanism; Well width; ZnO; Activation energy; Electric fields; Excitons2010-06-2510.1063/1.34523792016-02-24