Hoskens, R C Pvan de Roer, T GSmalbrugge, EKwaspen, J J MTolstikhin, V IJagadish, ChennupatiAcket, G ATan, Hark Hoe2015-12-132015-12-13December 81097-2137http://hdl.handle.net/1885/82653The novel Hot Electron Injection Laser (HEL), a three-terminal vertically integrated transistor-laser structure, is designed to investigate and possibly utilize the effects of carrier-heating on the optical gain and wavelength chirp. Simulations show theKeywords: Civil aviation; Current density; Electron injection; Electrons; Epitaxial growth; Heating; Hot carriers; Hot electrons; Injection lasers; Lasers; Leakage currents; Molecular beam epitaxy; Pulsed laser deposition; Semiconductor lasers; Thermal noise; activ Carrier heating; Chirp; Direct modulation; Heterojunction bipolar transistor; Hot electrons; Laser diode; Ultrafast modulation200510.1109/COMMAD.2004.15775732015-12-11