Chen, BinGao, QiangWang, Yan-BoLiao, Xiao-ZhouMai, Yiu-WingZou, JinJagadish, ChennupatiRinger, Simon P.Tan, Hark Hoe2015-12-131530-6984http://hdl.handle.net/1885/73321The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)B surface was investigated using in situ deformation transmission electron microscopy. Anelasticity was observed in nanowires with small diameters and the anelasKeywords: Anelastic behavior; Anelasticity; Crystalline defects; Gaas nanowires; Gaas semiconductors; Mechanical behavior; Situ deformation; Vertically aligned; Crystalline materials; Deformation; Gallium arsenide; Semiconducting gallium; Transmission electron micr Anelasticity; crystalline defects; GaAs nanowires; in situ deformation; transmission electron microscopy201310.1021/nl401175t2016-02-24