Nasiri, NoushinJin, DayongTricoli, Antonio2024-01-152195-1071http://hdl.handle.net/1885/311429ccurate measurement of ultraviolet radiation is key to many technologies including wearable devices for skin cancer prevention, optical communication systems, and missile launch detection. Nanostructuring of wide bandgap semi-conductors, such as GaN, ZnO, and SiC, promises some benefits over estab-lished commercial solutions relying on n–p type Si-homojunction technology. In the past decade, a variety of carefully nanostructured architectures have been demonstrated as efficient designs for visible-blind UV photo detectors featuring superior detectivity, thermal stability, robust radiation hardness, and very low operation bias and power consumption. Here, a comprehen-sive review of the latest achievements on ultraviolet photodetector materials is presented, with focus on the multiscale engineering of composition and nano-microscale morphology. The review concludes with a critical assessment and comparison of state-of-the-art devices aiming to provide guidelines and research directions for the next generation of UV photodetector materials.application/pdfen-AU© 2018 The authorsGaNnanoarchitectonicsTiO2UV photodetectorsvisible-blind photodetectorswearable deviceswide-bandgap semiconductorsZnO201910.1002/adom.2018005802022-09-25