Kluth, SusanJohannessen, BerntKluth, PatrickGlover, ChristopherForan, Garry JRidgway, Mark C2015-12-130168-583Xhttp://hdl.handle.net/1885/83130Ion irradiation of GaSb yields not only amorphization but also causes the material to become porous. For this report, GaSb has been irradiated to a dose sufficient to yield a porous network comprised of 15 nm wide rods. The local structure has been determined by EXAFS and compared with that of a polycrystalline standard. Significant Ga2O3 formation is observed along with Sb-Sb bonding far in excess of the homopolar bonding observed in other amorphous III-V semiconductors.Keywords: Amorphization; Amorphous materials; Antimony alloys; Crystalline materials; Ion implantation; Polycrystalline materials; Porous materials; Semiconductor materials; EXAFS; GaSb; Homopolar bonding; Porous semiconductors; Gallium alloys Amorphisation; EXAFS; GaSb; Ion implantation; Porous semiconductors200510.1016/j.nimb.2005.06.0602015-12-12