Fletcher, Neville H.2020-10-150368-1947http://hdl.handle.net/1885/212511General carrier density relations are derived for the case of an abrupt junction between two sections of semiconductor with arbitrary impurity contents and with an arbitrary applied bias. These relations reduce to those of Shockley at very low bias Levels, but in addition take account of all types of conductivity modulation effects.application/pdfen-AU© 1957 Taylor & Francis195710.1080/00207215708937064