Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications

Chen, YiminWang, GuoxiangShen, XiangXu, TiefengWang, RongpingWu, LiangcaiLu, YegangLi, JunjianDai, ShixunNie, Qiuhua2015-12-101466-8033http://hdl.handle.net/1885/68726ZnxSb100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications201410.1039/c3ce42024h2015-12-10