MacDonald, DanielDeenapanray, PrakashCuevas, AndresDiez, StephanGlunz, Stefan2015-12-132015-12-131012-0394http://hdl.handle.net/1885/81311Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier-induced defect, usually triggered by illumination. Despite its importance in photovoltaic materials, the chemical make-up of the defect remainsKeywords: Boron-oxygen defects; Crystalline silicon; Czochralski; Silicon interstitials; Boron; Crystal growth from melt; Crystalline materials; Ion implantation; Photovoltaic cells; Silicon; Defects Boron-oxygen defect; Crystalline silicon; Czochralski; Silicon interstitial20052015-12-11