Zhu, YiLi, ZiyuanZhang, LinglongWang, BowenYang, JiongFu, LanLu, Yuerui2021-08-031944-8244http://hdl.handle.net/1885/242623Developing a high-efficiency and low-cost light source with emission wavelength transparent to silicon is an essential step toward silicon-based nanophotonic devices and micro/nano industry platforms. Here, a near-infrared monolayer MoTe2 light-emitting diode (LED) has been demonstrated and its emission wavelength is transparent to silicon. By taking advantage of the quantum tunneling effect, the device has achieved a very high external quantum efficiency (EQE) of 9.5% at 83 K, which is the highest EQE obtained from LED devices fabricated from monolayer TMDs so far. When the device is operated as a photodetector, the MoTe2 device exhibits a strong photoresponsivity at resonant wavelength 1145 nm. The low dark current of ∼5pA and fast response time 5.06 ms are achieved due to suppression of hBN tunneling layer. Our results open a new route for the investigation of novel near-infrared silicon integrated optoelectronic devicesThe authors acknowledge Financial support from ANU Ph.D. student scholarship, China Scholarship Council, ANU Major Equipment Committee fund (14MEC34), Australian Research Council (ARC) Discovery Early Career Researcher Award (DECRA) (DE140100805) and ARC Discovery Project (DP180103238).© 2018 American Chemical Societymolybdenum ditelluridelight emitting diodequantum efficiencytunneling effectnear-infrared2018-12-1910.1021/acsami.8b14076