Wang, HaoYuan, Jiayuevan Veldhoven, Rene P JNotzel, Richard2015-12-080022-0248http://hdl.handle.net/1885/32652Keywords: Cap layer thickness; Cap layers; Defect diffusion; Efficiency increase; High temperature; InAs quantum dots; InP; Low temperatures; Low-temperature InP; Metal-organic vapor phase epitaxy; Optical qualities; Peak wavelength; Quantum Dot; Red shift; Semi co A3. Metalorganic vapor-phase epitaxy; A3. Quantum dot; B2. Semiconducting IIIV materialsEffect of low-temperature InP cap layer thickness on InAs quantum dot photoluminescence201110.1016/j.jcrysgro.2010.08.0482016-06-14