Wan, YimaoMcIntosh, Keith2015-12-132156-3381http://hdl.handle.net/1885/74892We investigate the surface passivation of crystalline silicon (c-Si) wafers that are textured with random upright pyramids and passivated with amorphous silicon nitride (SiNx ). Over a large range of refractive indices (n = 1.89-4.1 at 632 nm), we achieveKeywords: Crystalline silicons; PECVD silicon nitride; Planar surface; Pyramidal textures; Surface passivation; Surface recombination velocities; Surface recombinations; Textured surface; Passivation; Refractive index; Silicon; Silicon wafers; Surfaces; Textures; S Silicon nitride; surface passivation; surface recombination; texture201310.1109/JPHOTOV.2013.22718322016-02-24