Edelman, L AElliman, RobertRubin, LWashington, LJones, K S2015-12-082015-12-081071-1023http://hdl.handle.net/1885/33890Diffusion of B in amorphous Si is known to be four orders of magnitude higher than in crystalline Si. The effect of Ge at low concentrations on B diffusion in the amorphous phase is unknown. 1.5 μm thick relaxed layers of varying SiGe alloys (0, 6, 12, aKeywords: Orders of magnitude; Preexponential factors; Solid phase epitaxial regrowth; Strain-relaxed crystalline; Amorphous alloys; Crystalline materials; Diffusion; Epitaxial growth; Recrystallization (metallurgy); Secondary ion mass spectrometry; Germanium compoEffect of low Ge content on B diffusion in amorphous SiGe alloys200810.1116/1.27815112015-12-08