Elliman, RobertDall (previously Weijers), TessicaSpooner, M GKim, Tae-HyunWilkinson, AndrewHuth, STobias, V2015-12-070168-583Xhttp://hdl.handle.net/1885/24662Silicon-rich silicon oxide (SRSO) films, deposited onto (1 0 0) silicon substrates by plasma-enhanced chemical vapor deposition (PECVD), are shown to develop large tensile stresses during annealing in the temperature range 350-650 °C, a process that hasKeywords: Crack propagation; Plasma enhanced chemical vapor deposition; Silicon; Tensile stress; Linear cracks; Silicon substrate; Silicon-rich silicon oxide (SRSO) films; Underlying silicon; Dielectric films Crack; Hydrogen; Ion-implantation; PECVD; Stress; Thin film200710.1016/j.nimb.2007.01.0392015-12-07