Tang, KunGu, ShulinYe, JiandongHuang, ShiminGu, RanZhu, ShunmingZhang, RongShi, YiZheng, Youdou2015-09-182015-09-1800036951http://hdl.handle.net/1885/15567The authors reported on a carrier-concentration mediation of exciton-related radiative transition energies in Al-doped ZnO films utilizing temperature-dependent (TD) photoluminescence and TD Hall-effect characterizations. The transition energies of free and donor bound excitons consistently change with the measured TD carrier concentrations. Such a carrier-concentration mediation effect can be well described from the view of heavy-doping-induced free-carrier screening and band gap renormalization effects. This study gives an important development to the currently known optical properties of ZnO materials.This research is supported by the State Key Program for Basic Research of China under Grant No. 2011CB302003, National Natural Science Foundation of China (Nos. 61025020, 60990312, and 61274058), Basic Research Program of Jiangsu Province (BK2011437), and the Priority Academic Program Development of Jiangsu Higher Education Institutions.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/09/15). Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://dx.doi.org/10.1063/1.4809669Keywords: Al-doped zno films; Band gap renormalization effects; Donor-bound exciton; Radiative transitions; Temperature dependent; Transition energy; ZnO; Aluminum; Excitons; Metallic films; Optical properties; Semiconductor doping; Zinc oxide; Carrier concentratio2013-06-0410.1063/1.48096692016-02-24