de Azevedo, GustavoGlover, C JYu, Kin ManForan, Garry JRidgway, Mark C2015-12-132015-12-130168-583Xhttp://hdl.handle.net/1885/88314Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediatedKeywords: Amorphous materials; Chemical bonds; Crystallization; Free energy; Ion implantation; Relaxation processes; Annihilation; Semiconductor materials Amorphous solids; EXAFS; InAs; Ion implantation200310.1016/S0168-583X(03)00926-12015-12-12