Fong, KeanKho, TengFell, AndreasFranklin, EvanZin, Ngwe SoeMcIntosh, KeithRatcliff, ThomasStocks, MatthewBullock, JamesWang, Er-Chien (Eric)Blakers, Andrew2016-06-142156-3381http://hdl.handle.net/1885/103222The contact resistivity of evaporated Al on doped silicon is examined for a range of process conditions common to the fabrication of laboratory silicon solar cells. The effects of silicon surface preparation prior to evaporation, sintering temperature, the use of a shutter, and evaporation power are investigated. The presented evaporation conditions yielded the lowest published contact resistivity between Al-and phosphorus-doped Si over a large range of doping concentration. It is also demonstrated that a contact resistivity below 10-6 Ω.cm 2 can be achieved without sintering. Three-dimensional simulations are utilized to compare the obtained results for evaporated Al contacts with those for passivated contacts.201510.1109/JPHOTOV.2015.24386432016-06-14