Kim, TaeseokPillai, Manoj R.Aziz, Michael J.Scarpulla, Michael A.Dubon, Oscar D.Yu, Kin M.Beeman, Jeffrey W.Ridgway, Mark C.2015-09-172015-09-170021-8979http://hdl.handle.net/1885/15510Some of the authors thank for the support of the Center for Nanoscale Systems (CNS) at Harvard University is acknowledged. Harvard-CNS is a member of the National Nanotechnology Infrastructure Network (NNIN), which is supported by the National Science Foundation under NSF award No. ECS-0335765. K. M. Yu and J. W. Beeman were supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.Some of the authors thank for the support of the Center for Nanoscale Systems (CNS) at Harvard University is acknowledged. Harvard-CNS is a member of the National Nanotechnology Infrastructure Network (NNIN), which is supported by the National Science Foundation under NSF award No. ECS-0335765. K. M. Yu and J. W. Beeman were supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.Publishers version/PDF may be used on author's personal website, institutional website or institutional repository http://www.sherpa.ac.uk/romeo/issn/0003-6951 Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at 10.1063/1.3457106III-V semiconductorssolidificationliquid crystalsreflectivitymelting201010.1063/1.34571062015-12-10