Desnica-Frankovic, I DFuric, KDesnica, U VRidgway, Mark CGlover, Christopher2015-12-100168-583Xhttp://hdl.handle.net/1885/68353Raman spectroscopy was used to analyze structural modifications of monocrystalline Ge implanted with 3 × 1012 to 3 × 1016 cm-274Ge ions, at either room temperature (RT) or liquid nitrogen (LN) temperature. In all implanted samples, beyond the amorphizatKeywords: Absorption spectroscopy; Amorphous materials; Ion implantation; Raman spectroscopy; Thermal effects; Amorphization threshold; Amorphous germanium; Extended X ray absorption fine structure spectroscopy (EXAFS); Monocrystalline materials; Semiconducting ger Amorphous Ge; Disorder; EXAFS; Ion implantation; Raman spectroscopy200110.1016/S0168-583X(00)00489-42015-12-10