Gao, QiangJagadish, ChennupatiSun, B QGal, MichaelOuyang, LZou, JinTan, Hark Hoe2015-12-132015-12-130022-0248http://hdl.handle.net/1885/85431In this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found to mainly depend on the growth temperature and the fractional 1,1-dimethylhydrazine molar flow. A thin highly strained interface layer was observed between GaAsN and GaAs, which, contrary to previously published results, was not N enriched. The low-temperature (10K) photoluminescence spectra were composed of several emissions that we attribute to a combination of interband transition and transitions involving localized defect states.Keywords: Charge coupled devices; Computer simulation; Crystal defects; Crystal growth; Gas emissions; Metallorganic chemical vapor deposition; Microstructure; Optoelectronic devices; Photoluminescence; Semiconductor devices; Solar cells; Transmission electron micr A1. Photoluminescence; A1. Transmission electron microscopy; A3. Metalorganic chemical vapor deposition; B1. GaAsN200410.1016/j.jcrysgro.2003.12.0682015-12-12