Afifuddin, A.Butcher, K. S.A.Tansley, T. L.Timmers, H.Elliman, R. G.Weijers, T. D.M.Ophel, T. R.2026-01-012026-01-010780358147ORCID:/0000-0002-1304-4219/work/167651060https://hdl.handle.net/1885/733801408GaN has been grown by plasma assisted laser-induced chemical vapour deposition on sapphire and silicon substrates. The optical and morphological properties of the films are described. The films as grown exhibit a high resistivity. The stoichiometry of the films was determined with elastic recoil detection using 200 MeV Au ions as incident beam. Sample modifications induced by the Au beam have been found to increase conductivity. Similar changes occurred when the films were exposed to ultraviolet light.4enPublisher Copyright: © 2000 IEEE.Chemical lasersChemical vapor depositionConductivityGallium nitrideGoldOptical filmsParticle beam opticsPlasma chemistryPlasma propertiesSilicon200010.1109/SIM.2000.93919684950137055