Nilsson, HCaroff, PhilippeLind, ErikThelander, ClaesWernersson, Lars-Erik2015-12-13June 22-249781424435289http://hdl.handle.net/1885/81762Various channel materials are considered forth e III-V MOSFETs [1]. Among the III A/s, InSb has the highest mobility and the lowest effective mass. We may hence expect a large source injection velocity, but also parasitic leakage due to tunneling. Furthermore, the low density of states in the conduction band implies a small quantum capacitance. These effects may be studied in nanowire devices. So far, there are very few reports on detailed st udies o f transport in InSb nanowire MOSFETs [2], and the possibility to form heterostructures has not been exploited. In this paper, we present detailed characterization of InSb nanowire MOSFETs that is combined with a comparison to InAs and InSb/lnAs nanowire MOSFETs formed on the same nanowire.Keywords: Channel materials; Heterostructures; InAs; Injection velocity; InSb nanowire; Low density; MOSFETs; Nanowire devices; Nanowire MOSFETs; Parasitic leakages; Quantum capacitance; Electron mobility; Heterojunctions; Indium antimonides; MOSFET devices; Semico200910.1109/DRC.2009.53548442016-02-24