Harding, Ruth E.Davies, GordonHayama, S.Coleman, P. G.Burrows, C. P.Wong-Leung, Jennifer2015-11-032015-11-030003-6951http://hdl.handle.net/1885/16242The photoluminescence intensity from ion-implanted silicon can be quenched by the radiation damage implicit in the implantation.Annealing is then required before the intensity of the luminescence from a defect center is approximately proportional to the concentration of that center. Data from positron annihilation and photoluminescence experiments establish that severe quenching of the luminescence occurs when the mean separation of the small vacancy clusters is less than ∼30 atomic spacings, and the authors map out where, in the annealing and implantation phase space, the luminescence intensity is expected to be approximately proportional to the concentration of the optical centers.This work was supported by EPSRC Grant No. GR/ R10820/01 and by the EU Co-ordination Action programme CADRES. One of the authors J.W.-L. acknowledges the support of the Australian Research Council.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 3/11/15). Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2378402Keywords: Annealing; Ion implantation; Photoluminescence; Positron annihilation spectroscopy; Quenching; Radiation damage; Atomic spacings; Ion-implanted silicon; Luminescence intensity; Photoluminescence response; Semiconducting silicon2006-11-0110.1063/1.23784022015-12-08