Brett, D. A.de M. Azevedo, G.Llewellyn, D. J.Ridgway, M. C.2015-10-072015-10-070003-6951http://hdl.handle.net/1885/15791The gettering of Pd to nanocavities in Si for implantation doses ranging from 5×10¹³ to 1×10¹⁵ cm¯² and annealing temperatures ranging from 750 to 1050 °C was investigated using Rutherford backscattering and cross-sectional transmission electron microscopy. For a given annealing temperature, the gettering efficiency increased as the dose decreased. For a given dose, maximum gettering efficiency was achieved at the intermediate temperatures studied. Competition between silicide formation and nanocavity gettering limited gettering efficiency.The authors thank the Australian Research Council for their financial support. G.deM.A. acknowledges the Brazilian agency CNPq ~Conselho Nacional de Desenvolvimento Cientı´fico e Tecnolo´gico! for a postdoctoral fellowship.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 7/10/15). Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1597424Keywords: Annealing; Ion implantation; Palladium; Rutherford backscattering spectroscopy; Transmission electron microscopy; Nanocavity gettering; Semiconducting silicon2003-08-0410.1063/1.15974242015-12-12