Lever, P.Jagadish, C.Reece, P.Gal, M.Tan, Hark Hoe2015-11-022015-11-020003-6951http://hdl.handle.net/1885/16213Proton irradiation was used to create interdiffusion in In₀.₅Ga₀.₅Asquantum dots(QDs), grown by low-pressure metalorganic chemical vapor deposition. After 25-keV proton irradiation, the QD samples were annealed at two temperatures (700 or 750 °C) for 30 s. It was found that much lower annealing temperatures were needed to recover the photoluminescence signals than in the quantum-well case. Large blueshifts (120 meV) and narrowing of the photoluminescence spectra were seen. Various doses (5×10¹³–1×10¹⁵ cm⁻²) and implant temperatures (20–200 °C) were used to study the interdiffusion processes in these samples. In QD samples, much lower doses were required to achieve similar energy shifts than reported in quantum-well samples.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 3/11/15). Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1561153Keywords: Annealing; Metallorganic chemical vapor deposition; Photoluminescence; Proton irradiation; Semiconducting indium gallium arsenide; Thermal diffusion; Energy shifts; Semiconductor quantum dots2003-03-3110.1063/1.15611532015-12-08