Ip, K.Overberg, M. E.Baik, K. W.Wilson, R. G.Kucheyev, SergeiWilliams, JamesJagadish, ChennupatiRen, FanHeo, Y. W.Norton, D. P.Zavada, J. M.Pearton, S. J.2015-12-132015-12-130038-1101http://hdl.handle.net/1885/91653Two different plasma chemistries for etching ZnO were examined. Both Cl2/Ar and CH4/H2/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 Å/min for Cl2/Ar and ∼3000 Å/min for CH4/H2/Ar. The evolution of surface mKeywords: Composition; Dry etching; Inductively coupled plasma; Morphology; Scanning electron microscopy; Ion energy; Zinc oxide200310.1016/S0038-1101(03)00211-92015-12-12