Deenapanray, PrakashFu, LanJagadish, ChennupatiTan, Hark Hoe2015-12-131099-0062http://hdl.handle.net/1885/90417Plasma-enhanced chemical vapor deposition of SiO2 at temperatures below 300 °C was used in conjunction with rapid thermal annealing for quantum well intermixing. Variable blue shifts of up to approximately 200 meV were observed while still maintaining clKeywords: Annealing; Ellipsometry; Fourier transform infrared spectroscopy; Low temperature properties; Plasma enhanced chemical vapor deposition; Porosity; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor quantum wells; Silica; Qua200010.1149/1.13910002015-12-12