Joyce, HannahAlexander-Webber, Jack A.Peng, KunJohnston, Michael B.Parkinson, PatrickTan, Hark HoeJagadish, ChennupatiRazeghi, M.Mitrofanov, O.Vizcaino, J. L. P.Tan, C. H.2020-02-112020-02-11August 22-0277-786Xhttp://hdl.handle.net/1885/201627III-V semiconductor nanowires combine the properties of III-V materials with the unique advantages of the nanowire geometry, allowing efficient room temperature photodetection across a wide range of photon energies, from a few eV down to meV. For example, due to their nanoscale size, these show great promise as sub-wavelength terahertz (THz) detectors for near-field imaging or detecting elements within a highly integrated on-chip THz spectrometer. We discuss recent advances in engineering a number of sensitive photonic devices based on III-V nanowires, including InAs nanowires with tunable photoresponse, THz polarisers and THz detectors.The authors gratefully acknowledge financial support from the European Research Council (ERC Starting Grant ACrossWire), the Engineering and Physical Sciences Research Council (UK), the Australian Research Council, and the Australian National Fabrication Facility (ANFF). J. A. Alexander-Webber and H. J. Joyce especially thank the Royal Commission for the Exhibition of 1851 for their research fellowships.7 pagesapplication/pdfen-AU© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).Engineering semiconductor nanowires for photodetection: From visible to terahertz2018-09-1810.1117/12.23207152019-11-25