de Boo, Gabriele G.Yin, ChunmingRančić, MilošJohnson, BrettMcCallum, Jeffrey CSellars, MatthewRogge, Sven2023-02-062023-02-062469-9950http://hdl.handle.net/1885/285050In this paper, we use electrically detected optical excitation spectroscopy of individual erbium ions in silicon to determine their optical and paramagnetic properties simultaneously. We demonstrate that this high spectral resolution technique can be exploited to observe interactions typically unresolvable in silicon using conventional spectroscopy techniques due to inhomogeneous broadening. In particular, we resolve the Zeeman splitting of the I15/24 ground and I13/24 excited state separately, and in strong magnetic fields, we observe the anticrossings between Zeeman components of different crystal-field levels. We discuss the use of this electronic detection technique to aid in the identification of the symmetry and structure of erbium sites in silicon.We acknowledge the AFAiiR node of the NCRIS Heavy Ion Capability for access to ion-implantation facilities. C.Y. acknowledges support from an ARC Discovery Early Career Researcher Award (Grant No. DE150100791). This work was supported by the ARC Centre of Excellence for Quantum Computation and Communication Technology (Grant No. CE170100012) and the ARC Discovery Project (Grant No. DP150103699).application/pdfen-AU© 2020 American Physical Society202010.1103/PhysRevB.102.1553092021-12-02