Park, C JCho, H YKim, SChoi, Suk HoElliman, Robert GHan, J HKim, ChungwooHwang, H NHwang, C C2010-09-152010-12-202010-09-152010-12-20Journal of Applied Physics 99.3 (2006): 036101/1-30021-89791089-7550http://hdl.handle.net/10440/1093http://digitalcollections.anu.edu.au/handle/10440/1093The annealing temperature (TA) dependence of capacitance-voltage (C-V) characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and TA is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiation photoemission spectroscopy. Specifically, well-defined C-V characteristics with large hysteresis were found only for annealing temperatures greater than 950 °C where Ge nanocrystals are known to form. In this temperature regime, transmission electron microcopy and energy dispersive x-ray spectroscopy demonstrate the existence of regularly arranged Ge NCs of approximately 3–5 nm diameter located around 6.7 nm from the interface.3 pageshttp://www.sherpa.ac.uk/romeo/index.php "Author can archive pre-print (ie pre-refereeing) … post-print (ie final draft post-refereeing) … [and] publisher's version/PDF. Link to publisher version … [and] Copyright notice required. Publisher's version/PDF can be used on … employers web site. " - from SHERPA/RoMEO site (as at 25/02/10) © 2006 The American Institute of Physics. "This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics." - from publisher web site (as at 04/05/10)germaniumelemental semiconductorsnanostructured materialsannealingMIS structuresion implantationhysteresisphotoelectron spectratransmission electron microscopyX-ray chemical analysis2006-02-0710.1063/1.21682492015-12-08