Papanicolaou, NRao, Mulpuri VMolnar, BTucker, JEdwards, AlasdairHolland, ORidgway, Mark C2015-12-130168-583Xhttp://hdl.handle.net/1885/93396The electrical activation behavior of N- and Al-implantations in bulk V-doped semi-insulating 4H-SiC is similar to that in 4H-SiC epitaxial layers. The As- and Sb-implantations in p-type 6H-SiC epitaxial layers showed out-diffusion behavior with room-temperature sheet carrier concentrations of <20% of the implanted dose. In n-type GaN, compensating levels introduced by the high-dose implantation damage are thermally stable even at 1150°C annealing.Keywords: Aluminum; Annealing; Antimony; Arsenic; Carrier concentration; Diffusion; Nitrogen; Semiconducting gallium compounds; Semiconducting silicon compounds; Semiconductor doping; Silicon carbide; Thermodynamic stability; Gallium nitride; Ion implantation Activation; Annealing; GaN; Implantation; SiC19992015-12-12