McIntosh, KeithBaker-Finch, SimeonGrant, NicholasThomson, AndrewSingh, SonitaBaikie, Iain D.2015-12-080013-4651http://hdl.handle.net/1885/35794The charge density of a TiO2 film deposited on a SiO2 -passivated silicon wafer is determined. The TiO2 is deposited by atmospheric pressure chemical vapor deposition at 400°C, and the SiO2 is grown thermally at 950°C. This TiO2 - SiO2 stack is a usefulKeywords: Atmospheric pressure chemical vapor deposition; Capacitance voltage; Conservative limits; Front surfaces; High-efficiency solar cells; Kelvin Probe measurements; Low density; Optical transmissions; Photoconductance; TiO; Upper limits; Atmospheric chemistr200910.1149/1.32160292016-02-24