Wong-Leung, JenniferFatima, SJagadish, ChennupatiFitz Gerald, JohnChou, CZou, JinCockayne, David John Hugh2015-12-070021-8979http://hdl.handle.net/1885/26487Extended defects created in Si by ion implantation to doses below the amorphization threshold have been studied after annealing at 800 °C for 15 min. The implant species were the group IV elements Si, Ge, and Sn, and structural defects created by similarTransmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon20002015-12-07