Song, Man SukJung, Jae HunKim, YongWang, YZou, JinJoyce, Hannah JGao, QiangJagadish, ChennupatiTan, Hark Hoe2015-12-082015-12-080957-4484http://hdl.handle.net/1885/35573The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380°C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly aKeywords: Epitaxial growth; Growth temperature; Semiconducting gallium arsenide; Substrates; Surface chemistry; Conventional surfaces; Epitaxial nanowires; Nanobridge devices; Temperature range; Nanowires; gallium arsenide; germanium; nanowire; silicon; article; cr200810.1088/0957-4484/19/12/1256022015-12-08