Fu, LanJohnston, Michael BGal, MichaelJagadish, ChennupatiTan, Hark Hoe2015-12-130021-8979http://hdl.handle.net/1885/93670The intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells by proton irradiation with subsequent rapid thermal annealing (RTA) was studied. In each case, the energy shift increased with the increase of the irradiation doses. In comparison, larger energy shifts and better photoluminescence (PL) intensities recovery were observed in the InGaAs/AlGaAs material. A wavelength shift of 49.3 nm was obtained from the proton irradiated and annealed InGaAs/AlGaAs GRINSCH laser, showing that ion irradiation induced intermixing is a very promising technique in integrating lasers of different wavelengths.Keywords: Heterojunctions; Ion implantation; Metallorganic chemical vapor deposition; Photoluminescence; Proton irradiation; Quantum efficiency; Quantum well lasers; Rapid thermal annealing; Semiconducting indium gallium arsenide; Semiconductor growth; Substrates;19992015-12-12