Grant, NicholasMcIntosh, KeithTan, Jason2015-12-072162-8769http://hdl.handle.net/1885/18973We report on a procedure to temporarily attain a very high level of surface passivation for silicon wafers at room temperature. When applied during a photoconductance measurement, the procedure permits an accurate assessment of the bulk lifetime, even for201210.1149/2.003202jss2015-12-07