Gao, Qiang2018-11-012018-11-012004b2212498http://hdl.handle.net/1885/148792x, 164 leavesen-AUQC611.8.G3G36 2004Gallium compounds Optical propertiesGallium compounds Electric propertiesMetal organic chemical vapor depositionGallium arsenide semiconductorsOptoelectronic devices MaterialsCompound semiconductors MaterialsGrowth and characterisation of (In)GaAsN alloys for optoelectronic applications200410.25911/5d626d7deff552018-09-21