Fickenscher, M. A.Jackson, H. E.Smith, L. M.Yarrison-Rice, J. M.Kang, J. H.Paiman, SuriatiGao, Q.Jagadish, C.Tan, Hark Hoe2015-11-182015-11-180003-6951http://hdl.handle.net/1885/16513We use spatially and temporally resolved photoluminescence to measure excitondiffusion in single zinc blende GaAs/AlGaAs core/shell and mixed phase InPnanowires.Excitons in the single phase GaAs/AlGaAs nanowires are seen to diffuse rapidly throughout the nanowire with a measured diffusion constant ranging from 45 to 100 cm²/s, while in the mixed phase, InPnanowireelectrons and holes are seen to rapidly localize to the quantum confined states in the zinc blende and wurtzite segments, respectively. The diffusion constant in the GaAs/AlGaAs nanowire is similar to the best hole mobilities observed in modulation doped heterostructures.We acknowledge the financial support of the National Science Foundation through grants DMR-0806700, 0806572, 1105362, 1105121, and ECCS-1100489, and the Australian Research Council.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/11/15). Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.3671367Keywords: Core/shell; Diffusion constant; Direct imaging; Electrons and holes; Exciton diffusion; GaAs/AlGaAs; InP; Mixed phase; Modulation-doped; Quantum-confined state; Semiconductor nanowire; Single phase; Spatial diffusions; Temporally resolved; Wurtzites; Zinc2011-12-2910.1063/1.36713672016-02-24